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| UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE . 1 NPN EPITAXIAL SILICON TRANSISTOR FEATURES * Reverse Biased SOA with Inductive Load @ Tc=100 * Inductive Switching Matrix 0.5 ~ 1.5 Amp, 25 and 100 Typical tc = 290ns @ 1A, 100 . * 700V Blocking Capability TO-126 APPLICATIONS * Switching Regulator's, Inverters * Motor Controls * Solenoid/Relay drivers * Deflection circuits *Pb-free plating product number: MJE13003L ORDERING INFORMATION Normal Order Number Lead Free Plating Package TO-126 MJE13003-x-T60-F-K MJE13003L-x-T60-F-K Note: x: Rank, refer to Classification of hFE1. Pin Assignment 1 2 3 B C E Packing Bulk MJE13003L-x-T60-F-K (1)Packing Type (2)Pin Assignment (3)Package Type (4)Rank (5)Lead Plating (1)K: Bulk (2) refer to Pin Assignment (3) T60: TO-126 (4) x: refer to Classification of hFE1 (5) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd 1 of 7 QW-R204-004,E MJE13003 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage NPN EPITAXIAL SILICON TRANSISTOR SYMBOL RATINGS UNIT VCEO(SUS) 400 V VCEO 700 V VEBO 9 V Continuous IC 1.5 Collector Current A Peak (1) ICM 3 Continuous IB 0.75 Base Current A Peak (1) IBM 1.5 Continuous IE 2.25 Emitter Current A Peak (1) IEM 4.5 Total Power Dissipation (TC=25 ) PD 40 W Junction Temperature TJ 150 Storage Temperature TSTG -40 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS (Note) Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current SECOND BREAKDOWN Second Breakdown Collector Current with bass forward biased Clamped Inductive SOA with base reverse biased ON CHARACTERISTICS (Note) DC Current Gain SYMBOL TEST CONDITIONS MIN 400 TC=25C TC=100 1 5 1 See Figure 5 See Figure 6 IC=0.5A, VCE=10V IC=1A, VCE=2V IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1.5A, IB=0.5A IC=1A, IB=0.25A, TC=100 IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1A, IB=0.25A, TC=100 IC=100mA, VCE=10V, f=1MHz VCB=10V, IE=0, f=0.1MHz 8 5 40 25 0.5 1 3 1 1 1.2 1.1 10 21 TYP MAX UNIT V mA mA VCEO(SUS) IC=10 mA , IB=0 VCEO=Rated Value, ICEO VBE(OFF)=1.5 V IEBO VEB=9 V, IC=0 Is/b RBSOA hFE1 hFE2 VCE(SAT) Collector-Emitter Saturation Voltage V Base-Emitter Saturation Voltage VBE(SAT) V DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product fT Output Capacitance Cob SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time tD Rise Time tR Storage Time tS Fall Time tFALL Inductive Load, Clamped (Table 1) Storage Time tSV Crossover Time tC Fall Time tFALL Note: Pulse Test : PW=300 s, Duty Cycle 2% 4 MHz pF VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25 s, Duty Cycle 1% 0.05 0.5 2 0.4 1.7 0.29 0.15 0.1 1 4 0.7 4 0.75 s s s s s s s IC=1A, Vclamp=300V, IB1=0.2A, VBE(OFF)=5Vdc, TC=100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R204-004,E MJE13003 CLASSIFICATION OF hFE1 RANK RANGE A 8 ~ 16 B 15 ~ 21 NPN EPITAXIAL SILICON TRANSISTOR C 20 ~ 26 D 25 ~ 31 E 30 ~ 36 F 35 ~ 40 Table 1.Test Conditions for Dynamic Performance Reverse Bias Safe Operating Area and Inductive Switching +5V 1N4933 0.001 F 33 1N4933 1k 68 2N2222 1k +5V 1N4933 270 0.02 F NOTE PW and Vcc Adjusted for Desired Ic RB Adjusted for Desired IB1 1k 2N2905 47 1/2W MJE200 100 -VBE(OFF) RB IB T.U.T. Ic 5.1k 51 Vclamp *SELECTED FOR1kV VCE 33 MJE210 L MR826* Vcc Resistive Switching Test Circuits 5V Pw DUTY CYCLE 10% tR, tF 10ns +125V Rc TUT RB D1 -4.0V SCOPE Circuit Values Coil Data : VCC=20V Ferroxcube core #6656 Vclamp=300V Full Bobbin ( ~ 200 Turns) #20 GAP for 30 mH/2 A Lcoil=50mH VCC=125V RC=125 D1=1N5820 or Equiv. RC=47 Output Waveforms Test Waveforms Ic Ic(pk) t1 tf tf CLAMPED t t1 Adjusted to Obtain Ic t1 VCE or Vclamp t2 Lcoil(Icpk) Vcc Lcoil(Icpk) Vclamp Test Equipment Scope-Tektronics 475 or Equivalent +10.3 V 25 S 0 -8.5V tr, tf<10ns Duty Cycly=1.0% RB and Rc adjusted for desired IB and Ic VCE TIME t2 t Figure 1. Inductive Switching Measurements ICPK 90% Vclamp IC tsv tRV tc VCE IB 90% IB1 10% Vclamp 10% Icpk 2% Ic Vclamp 90% Ic tFI tTI Table 2. Typical Inductive Switching Performance Ic AMP 0.5 Tc tsv s 1.3 1.6 1.5 1.7 1.8 3 tRV s 0.23 0.26 0.10 0.13 0.07 0.08 tFI s 0.30 0.30 0.14 0.26 0.10 0.22 tTI s 0.35 0.40 0.05 0.06 0.05 0.08 tc s 0.30 0.36 0.16 0.29 0.16 0.28 25 100 25 100 25 100 1 1.5 Time NOTE: All Data Recorded in the Inductive Switching Circuit in Table 1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 7 QW-R204-004,E MJE13003 SWITCHING TIMES NOTE NPN EPITAXIAL SILICON TRANSISTOR In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads, which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tSV = Voltage Storage Time, 90% IB1 to 10% Vclamp tRV = Voltage Rise Time, 10 ~ 90% Vclamp tFI= Current Fall Time, 90 ~ 10% IC tTI = Current Tail, 10 ~ 2% IC tC = Crossover Time, 10% Vclamp to 10% IC For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222: PSWT = 1/2 VCCIC(tC)f In general, tRV + tFI tC. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25 and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tC and tSV) which are guaranteed at 100 . RESISTIVE SWITCHING PERFORMANCE Figure 2. Turn-On Time 2 10 7 1 0.7 0.5 Figure 3. Turn-Off Time ts Vcc=125V Ic/IB=5 TJ=25 tR Vcc=125V Ic/IB=5 TJ=25 Time, t (gs) 5 3 2 Time, t (gs) 0.3 0.2 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 tD @ VBE(OFF)=5V tF 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 10 20 0.1 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 Collector Current, IC (A) Figure 4. Thermal Response 1 0.7 Collector Current, IC (A) D=0.5 0.2 0.1 0.05 0.02 Effective Transient Thermal Resistance, R(t) (Normalized) 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 Single Pulse 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 Z JC(t)=r(t) R JC R JC=3.12 /W Max D Curves Apply for Power Pulse Train Shown Read Time at t1 TJ(pk)-TC=P(pk) P JC(t) P (PK) t1 t2 Duty Cycle, D=t1/t2 0.01 0.01 3 5 10 20 50 100 200 500 1000 Time or Pulse Width, t (ms) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R204-004,E MJE13003 SAFE OPERATING AREA INFORMATION FORWARD BIAS NPN EPITAXIAL SILICON TRANSISTOR There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TC = 25 ; TJ(PK) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC25 . Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 5. TJ(PK) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 6 gives PBSOA characteristics. The Safe Operating Area of Figures 5 and 6 are specified ratings(for these devices under the test conditions shown.) Figure 5. Active Region Safe Operating Area 10 5 2 1 0.5 Tc=25 0.2 0.1 0.05 0.02 0.01 0 0 100 200 300 dc 5.0 ms 10 ms Figure 6. Reverse Bias Safe Operating Area 1.6 Collector Current, IC (A) 100 s Collector Current, IC (A) 1.2 VBE(OFF)=9V 0.8 1.0 ms TJ 100 IB1=1A Thermal Limit(Single Pule) Bonding Wire Limit Second Breakdown Limit Curves Apply Below Rated VCEO 0.4 5V 3V 1.5V 5 10 20 50 100 200 300 500 400 500 600 700 800 Collector-Emitter Voltage, VCE (V) Collector-Emitter Clamp Voltage,VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R204-004,E MJE13003 DC Current Gain 80 60 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL PERFORMANCE CHARACTERISTICS Collector Saturation Region 2 Collector-Emitter Voltage, VCE(V) TJ=150 25 TJ=25 1.6 DC Current Gain, hFE 40 30 20 1.2 Ic=0.1A 0.3A 0.5A 1A 1.5A -55 1 0 8 6 4 0.8 VCE=2V - - - - - -VCE=5V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 0.4 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 Collector Current,IC (A) Base Current, IB (A) Base-Emitter Voltage 1.4 0.35 Collector-Emitter Saturation Region 0.3 0.25 1.2 VBE(SAT) @ IC/IB=3 - - - - - -VBE(ON) @ VCE=2V Voltage, V(V) Ic/IB=3 TJ=-55 25 1 TJ=-55 25 Voltage, V(V) 0.2 0.15 0.1 0.8 25 0.6 150 150 0.05 0 0.02 0.03 0.4 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 Collector Current,IC (A) Collector Current, IC (A) 10 4 Collector cut-off Region 500 Capacitance 300 A) VCE=250V Capacitance, C (pF) 10 3 TJ=25 Cib 200 Collector Current, IC ( TJ=150 10 2 125 100 100 70 50 30 20 10 1 75 50 25 10 0 10 FORWARD 0 +0.2 +0.4 +0.6 7 5 0.1 0.2 0.5 1 2 5 10 20 50 Cob 10 -1 REVERSE -0.2 -0.4 100 200 500 1000 Base-Emitter Voltage, VBE (V) Reverse Voltage, VR (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R204-004,E MJE13003 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R204-004,E |
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